- Jess***Jones
- 2026/04/17
Helaian data
IV1D12030U3.pdfMahukan harga yang lebih baik?
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| Kuantiti | Harga seunit | Ext.Harga |
|---|---|---|
| 1+ | $4.971 | $4.97 |
| 10+ | $4.858 | $48.58 |
| 30+ | $4.58 | $137.40 |
| 90+ | $4.504 | $405.36 |
Spesifikasi teknologi IV1D12030U3
Spesifikasi Teknikal Inventchip - IV1D12030U3, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan Inventchip - IV1D12030U3
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | Inventchip | |
| Voltan - Penyerang (Vf) (Max) @ Jika | 1.8 V @ 15 A | |
| Voltan - DC Reverse (Vr) (Max) | 1200 V | |
| Teknologi | SiC (Silicon Carbide) Schottky | |
| Pembekal Peranti Pakej | TO-247-3 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Siri | - | |
| Reverse Recovery Time (TRR) | 0 ns |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pakej / Kes | TO-247-3 | |
| Pakej | Tube | |
| Suhu operasi - Junction | -55°C ~ 175°C | |
| pemasangan Jenis | Through Hole | |
| Konfigurasi diod | 1 Pair Common Cathode | |
| Semasa - Songsang Kebocoran @ Vr | 80 µA @ 1200 V | |
| Semasa - Purata Rectified (Io) (per Diode) | 44A (DC) |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan Inventchip IV1D12030U3.
| Atribut produk | ![]() |
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|---|---|---|---|---|
| Nombor Bahagian | IV1D12030U3 | IV1D12040U2 | IV1D12020T3 | IV1Q12050T3 |
| Pengeluar | Inventchip | Inventchip | Inventchip | Inventchip |
| Teknologi | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiCFET (Silicon Carbide) |
| Suhu operasi - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | - |
| Siri | - | - | - | - |
| Konfigurasi diod | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | - |
| Voltan - Penyerang (Vf) (Max) @ Jika | 1.8 V @ 15 A | 1.8 V @ 40 A | 1.8 V @ 20 A | - |
| Pakej / Kes | TO-247-3 | TO-247-2 | TO-247-3 | TO-247-3 |
| Semasa - Songsang Kebocoran @ Vr | 80 µA @ 1200 V | 200 µA @ 1200 V | 100 µA @ 1200 V | - |
| Semasa - Purata Rectified (Io) (per Diode) | 44A (DC) | 102A (DC) | 30A (DC) | - |
| pemasangan Jenis | Through Hole | Through Hole | Through Hole | Through Hole |
| Pembekal Peranti Pakej | TO-247-3 | TO-247-2 | TO-247-3 | TO-247-3 |
| Reverse Recovery Time (TRR) | 0 ns | 0 ns | 0 ns | - |
| Voltan - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | - |
| Pakej | Tube | Tube | Tube | Tube |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | - |
Muat turun IV1D12030U3 PDF datasheets dan dokumentasi Inventchip untuk IV1D12030U3 - Inventchip.
IV1Q12050T3InventchipSIC MOSFET, 1200V 50MOHM, TO-247
IV1D06006P3InventchipDIODE SIC 650V 16.7A TO252-3
IV1D12005O2InventchipDIODE SIL CARB 1.2KV 17A TO220-2
IV1D12040U2InventchipSIC DIODE, 1200V 40A, TO-247-2
IV1D12015T2InventchipDIODE SIL CARB 1.2KV 44A TO247-2
IV1D12010O2InventchipDIODE SIL CARB 1.2KV 28A TO220-2
IV1Q12050T4InventchipSIC MOSFET, 1200V 50MOHM, TO-247
IV1D06006O2InventchipDIODE SIL CARB 650V 17.4A TO220
IV1D12020T3InventchipSIC DIODE, 1200V 20A(10A/LEG), T
IV1D12020T2InventchipDIODE SIL CARB 1.2KV 54A TO247-2
IV1D12010T2InventchipDIODE SIL CARB 1.2KV 30A TO247-2
IV1Q12160T4InventchipSIC MOSFET, 1200V 160MOHM, TO-24Alamat e -mel anda tidak akan diterbitkan.
| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
| Brazil | 7 | |
| Eropah | Jerman | 5 |
| United Kingdom | 4 | |
| Itali | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Jepun | 4 | |
| Timur Tengah | Israel | 6 |
| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |

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