- Jess***Jones
- 2026/04/17
Helaian data
IV1D12010T2.pdfMahukan harga yang lebih baik?
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| Kuantiti | Harga seunit | Ext.Harga |
|---|---|---|
| 1+ | $3.115 | $3.12 |
| 10+ | $2.745 | $27.45 |
| 30+ | $2.28 | $68.40 |
| 90+ | $2.057 | $185.13 |
| 450+ | $1.955 | $879.75 |
| 900+ | $1.908 | $1,717.20 |
Spesifikasi teknologi IV1D12010T2
Spesifikasi Teknikal Inventchip - IV1D12010T2, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan Inventchip - IV1D12010T2
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | Inventchip | |
| Voltan - Penyerang (Vf) (Max) @ Jika | 1.8 V @ 10 A | |
| Voltan - DC Reverse (Vr) (Max) | 1200 V | |
| Teknologi | SiC (Silicon Carbide) Schottky | |
| Pembekal Peranti Pakej | TO-247-2 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Siri | - | |
| Reverse Recovery Time (TRR) | 0 ns |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pakej / Kes | TO-247-2 | |
| Pakej | Tube | |
| Suhu operasi - Junction | -55°C ~ 175°C | |
| pemasangan Jenis | Through Hole | |
| Semasa - Songsang Kebocoran @ Vr | 50 µA @ 1200 V | |
| Semasa - Purata Rectified (Io) | 30A | |
| Kemuatan @ Vr, F | 575pF @ 1V, 1MHz |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan Inventchip IV1D12010T2.
| Atribut produk | ![]() |
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|---|---|---|---|---|
| Nombor Bahagian | IV1D12010O2 | IV1D12015T2 | IV1D12020T2 | IV1D12005O2 |
| Pengeluar | Inventchip | Inventchip | Inventchip | Inventchip |
| Voltan - Penyerang (Vf) (Max) @ Jika | - | - | - | - |
| Siri | - | - | - | - |
| Semasa - Songsang Kebocoran @ Vr | - | - | - | - |
| Kemuatan @ Vr, F | - | - | - | - |
| pemasangan Jenis | - | Surface Mount | Through Hole | Surface Mount |
| Pakej / Kes | - | 196-LFBGA | 16-DIP (0.300', 7.62mm) | 64-VFQFN Exposed Pad |
| Pakej | - | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Semasa - Purata Rectified (Io) | - | - | - | - |
| Suhu operasi - Junction | - | - | - | - |
| Reverse Recovery Time (TRR) | - | - | - | - |
| Teknologi | - | - | - | - |
| Voltan - DC Reverse (Vr) (Max) | - | - | - | - |
| Speed | - | - | - | - |
| Pembekal Peranti Pakej | - | 196-NFBGA (12x12) | 16-PDIP | 64-VQFN (9x9) |
Muat turun IV1D12010T2 PDF datasheets dan dokumentasi Inventchip untuk IV1D12010T2 - Inventchip.
IV1D12030U3InventchipSIC DIODE, 1200V 30A(15A/LEG), T
IV1D06006P3InventchipDIODE SIC 650V 16.7A TO252-3
IV1D06006O2InventchipDIODE SIL CARB 650V 17.4A TO220
IV1D12010O2InventchipDIODE SIL CARB 1.2KV 28A TO220-2
IV1D12015T2InventchipDIODE SIL CARB 1.2KV 44A TO247-2
IV1D12020T2InventchipDIODE SIL CARB 1.2KV 54A TO247-2
IV1Q12050T4InventchipSIC MOSFET, 1200V 50MOHM, TO-247
IV1Q12050T3InventchipSIC MOSFET, 1200V 50MOHM, TO-247
IV1D12020T3InventchipSIC DIODE, 1200V 20A(10A/LEG), T
IV1Q12160T4InventchipSIC MOSFET, 1200V 160MOHM, TO-24
IV1D12040U2InventchipSIC DIODE, 1200V 40A, TO-247-2
IV1D12005O2InventchipDIODE SIL CARB 1.2KV 17A TO220-2Alamat e -mel anda tidak akan diterbitkan.
| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
| Brazil | 7 | |
| Eropah | Jerman | 5 |
| United Kingdom | 4 | |
| Itali | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Jepun | 4 | |
| Timur Tengah | Israel | 6 |
| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |

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