- Jess***Jones
- 2026/04/17
PCN Ossolescence/ EOL
Mult Dev OBS 2/Apr/2020.pdfSpesifikasi teknologi STS5DP3LLH6
Spesifikasi Teknikal STMicroelectronics - STS5DP3LLH6, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan STMicroelectronics - STS5DP3LLH6
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | STMicroelectronics | |
| VGS (th) (Max) @ Id | 2.5V @ 250µA | |
| Teknologi | MOSFET (Metal Oxide) | |
| Pembekal Peranti Pakej | 8-SO | |
| Siri | DeepGATE™, STripFET™ H6 | |
| Rds On (Max) @ Id, VGS | 56mOhm @ 2.5A, 10V | |
| Power - Max | 2.7W | |
| Pakej / Kes | 8-SOIC (0.154", 3.90mm Width) | |
| Pakej | Tape & Reel (TR) |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Suhu Operasi | 150°C (TJ) | |
| pemasangan Jenis | Surface Mount | |
| Input kemuatan (CISS) (Max) @ Vds | 639pF @ 25V | |
| Gate Charge (QG) (Max) @ VGS | 6nC @ 4.5V | |
| FET Ciri | Logic Level Gate, 4.5V Drive | |
| Parit untuk Source Voltan (Vdss) | 30V | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 5A (Ta) | |
| konfigurasi | 2 P-Channel (Dual) | |
| Nombor produk asas | STS5D |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| Mencapai status | REACH Unaffected |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan STMicroelectronics STS5DP3LLH6.
| Atribut produk | ||||
|---|---|---|---|---|
| Nombor Bahagian | STS5DP3LLH6 | STS5DNF20V | STS5DPF20L | STS5DNF60L |
| Pengeluar | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| konfigurasi | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| Gate Charge (QG) (Max) @ VGS | 6nC @ 4.5V | 11.5nC @ 4.5V | 16nC @ 5V | 15nC @ 4.5V |
| Suhu Operasi | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Pembekal Peranti Pakej | 8-SO | 8-SOIC | 8-SOIC | 8-SOIC |
| Power - Max | 2.7W | 2W | 1.6W | 2W |
| Parit untuk Source Voltan (Vdss) | 30V | 20V | 20V | 60V |
| Pakej / Kes | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Teknologi | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input kemuatan (CISS) (Max) @ Vds | 639pF @ 25V | 460pF @ 25V | 1350pF @ 16V | 1030pF @ 25V |
| Pakej | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Siri | DeepGATE™, STripFET™ H6 | STripFET™ II | STripFET™ II | Automotive, AEC-Q101, STripFET™ II |
| Nombor produk asas | STS5D | STS5D | STS5D | STS5DNF60 |
| VGS (th) (Max) @ Id | 2.5V @ 250µA | 600mV @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Semasa - Drain berterusan (Id) @ 25 ° C | 5A (Ta) | 5A | 5A | 5A |
| FET Ciri | Logic Level Gate, 4.5V Drive | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| pemasangan Jenis | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, VGS | 56mOhm @ 2.5A, 10V | 40mOhm @ 2.5A, 4.5V | 55mOhm @ 2.5A, 10V | 45mOhm @ 2A, 10V |
Muat turun STS5DP3LLH6 PDF datasheets dan dokumentasi STMicroelectronics untuk STS5DP3LLH6 - STMicroelectronics.
STS5PF20V/S08STMicroelectronics
STS5NF60L MOSSTMicroelectronics
STS5DNE30LSTMicroelectronics
STS595DRSTSAlamat e -mel anda tidak akan diterbitkan.
| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
| Brazil | 7 | |
| Eropah | Jerman | 5 |
| United Kingdom | 4 | |
| Itali | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Jepun | 4 | |
| Timur Tengah | Israel | 6 |
| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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