- Jess***Jones
- 2026/04/17
Helaian data
ST(B,P)6NC60(FP).pdfSpesifikasi teknologi STP6NC60
Spesifikasi Teknikal STMicroelectronics - STP6NC60, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan STMicroelectronics - STP6NC60
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | STMicroelectronics | |
| VGS (th) (Max) @ Id | 4V @ 250µA | |
| VGS (Max) | ±30V | |
| Teknologi | MOSFET (Metal Oxide) | |
| Pembekal Peranti Pakej | TO-220 | |
| Siri | PowerMESH™ II | |
| Rds On (Max) @ Id, VGS | 1.2Ohm @ 3A, 10V | |
| Kuasa Penyebaran (Max) | 125W (Tc) | |
| Pakej / Kes | TO-220-3 | |
| Pakej | Tube |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Suhu Operasi | 150°C (TJ) | |
| pemasangan Jenis | Through Hole | |
| Input kemuatan (CISS) (Max) @ Vds | 1020 pF @ 25 V | |
| Gate Charge (QG) (Max) @ VGS | 45.5 nC @ 10 V | |
| Jenis FET | N-Channel | |
| FET Ciri | - | |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | |
| Parit untuk Source Voltan (Vdss) | 600 V | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 6A (Tc) | |
| Nombor produk asas | STP6N |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 3 (168 Hours) |
| Mencapai status | REACH Unaffected |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan STMicroelectronics STP6NC60.
| Atribut produk | ||||
|---|---|---|---|---|
| Nombor Bahagian | STP6NC60 | STP6NK60Z | STP6NK50Z | STP6NK60ZFP |
| Pengeluar | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Kuasa Penyebaran (Max) | 125W (Tc) | 110W (Tc) | 90W (Tc) | 30W (Tc) |
| FET Ciri | - | - | - | - |
| Semasa - Drain berterusan (Id) @ 25 ° C | 6A (Tc) | 6A (Tc) | 5.6A (Tc) | 6A (Tc) |
| Pakej | Tube | Tube | Tube | Tube |
| Rds On (Max) @ Id, VGS | 1.2Ohm @ 3A, 10V | 1.2Ohm @ 3A, 10V | 1.2Ohm @ 2.8A, 10V | 1.2Ohm @ 3A, 10V |
| Jenis FET | N-Channel | N-Channel | N-Channel | N-Channel |
| Suhu Operasi | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input kemuatan (CISS) (Max) @ Vds | 1020 pF @ 25 V | 905 pF @ 25 V | 690 pF @ 25 V | 905 pF @ 25 V |
| Siri | PowerMESH™ II | SuperMESH™ | SuperMESH™ | SuperMESH™ |
| Pakej / Kes | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 Full Pack |
| VGS (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4.5V @ 50µA | 4.5V @ 100µA |
| Teknologi | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Parit untuk Source Voltan (Vdss) | 600 V | 600 V | 500 V | 600 V |
| Pembekal Peranti Pakej | TO-220 | TO-220 | TO-220 | TO-220FP |
| pemasangan Jenis | Through Hole | Through Hole | Through Hole | Through Hole |
| Nombor produk asas | STP6N | STP6NK60 | STP6N | STP6NK60 |
| Gate Charge (QG) (Max) @ VGS | 45.5 nC @ 10 V | 46 nC @ 10 V | 24.6 nC @ 10 V | 46 nC @ 10 V |
| VGS (Max) | ±30V | ±30V | ±30V | ±30V |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Muat turun STP6NC60 PDF datasheets dan dokumentasi STMicroelectronics untuk STP6NC60 - STMicroelectronics.
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| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
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| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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