- Jess***Jones
- 2026/04/17
Helaian data
STx90N4F3.pdfSpesifikasi teknologi STI90N4F3
Spesifikasi Teknikal STMicroelectronics - STI90N4F3, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan STMicroelectronics - STI90N4F3
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | STMicroelectronics | |
| VGS (th) (Max) @ Id | 4V @ 250µA | |
| VGS (Max) | ±20V | |
| Teknologi | MOSFET (Metal Oxide) | |
| Pembekal Peranti Pakej | I2PAK | |
| Siri | STripFET™ III | |
| Rds On (Max) @ Id, VGS | 6.5mOhm @ 40A, 10V | |
| Kuasa Penyebaran (Max) | 110W (Tc) | |
| Pakej / Kes | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Pakej | Tube |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Suhu Operasi | -55°C ~ 175°C (TJ) | |
| pemasangan Jenis | Through Hole | |
| Input kemuatan (CISS) (Max) @ Vds | 2200 pF @ 25 V | |
| Gate Charge (QG) (Max) @ VGS | 54 nC @ 10 V | |
| Jenis FET | N-Channel | |
| FET Ciri | - | |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | |
| Parit untuk Source Voltan (Vdss) | 40 V | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 80A (Tc) | |
| Nombor produk asas | STI9 |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| Mencapai status | REACH Unaffected |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan STMicroelectronics STI90N4F3.
| Atribut produk | ![]() |
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||
|---|---|---|---|---|
| Nombor Bahagian | STI90N4F3 | STI8N65M5 | STI8036 | STIB1560DM2T-LZ |
| Pengeluar | STMicroelectronics | STMicroelectronics | SUNTO | STMicroelectronics |
| Gate Charge (QG) (Max) @ VGS | 54 nC @ 10 V | 15 nC @ 10 V | - | - |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Pembekal Peranti Pakej | I2PAK | I2PAK | - | - |
| Suhu Operasi | -55°C ~ 175°C (TJ) | 150°C (TJ) | - | - |
| Jenis FET | N-Channel | N-Channel | - | - |
| Input kemuatan (CISS) (Max) @ Vds | 2200 pF @ 25 V | 690 pF @ 100 V | - | - |
| Nombor produk asas | STI9 | STI8 | - | STIB1560 |
| Teknologi | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| VGS (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | - | - |
| Siri | STripFET™ III | MDmesh™ V | - | SLLIMM - 2nd |
| Rds On (Max) @ Id, VGS | 6.5mOhm @ 40A, 10V | 600mOhm @ 3.5A, 10V | - | - |
| Pakej / Kes | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | - | 26-PowerDIP Module (1.146", 29.10mm) |
| FET Ciri | - | - | - | - |
| VGS (Max) | ±20V | ±25V | - | - |
| Pakej | Tube | Tube | - | Bulk |
| Semasa - Drain berterusan (Id) @ 25 ° C | 80A (Tc) | 7A (Tc) | - | - |
| pemasangan Jenis | Through Hole | Through Hole | - | Through Hole |
| Kuasa Penyebaran (Max) | 110W (Tc) | 70W (Tc) | - | - |
| Parit untuk Source Voltan (Vdss) | 40 V | 650 V | - | - |
Muat turun STI90N4F3 PDF datasheets dan dokumentasi STMicroelectronics untuk STI90N4F3 - STMicroelectronics.
STI8036SUNTO
STIB1560DM2T-LZSTMicroelectronicsDISCRETE
STI9284-28JSUNTO
STI8035SUNTO
STI9712SUNTO
STIB1560DM2-LSTMicroelectronicsPTD HIGH VOLTAGE
STI8070ASTI
STIB1060DM2T-LZSTMicroelectronicsDISCRETE
STI9284SUNTO
STI8120CTMI
STI8720STI
STI8035BESUNTO
STI8039SUNTO
STI9715SUNTO
STI8070BSTIAlamat e -mel anda tidak akan diterbitkan.
| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
| Brazil | 7 | |
| Eropah | Jerman | 5 |
| United Kingdom | 4 | |
| Itali | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Jepun | 4 | |
| Timur Tengah | Israel | 6 |
| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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