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- 2026/04/17
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Transistor, MOSFET Flammability.pdfSpesifikasi teknologi R6035ENZC8
Spesifikasi Teknikal Rohm Semiconductor - R6035ENZC8, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan Rohm Semiconductor - R6035ENZC8
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | LAPIS Technology | |
| VGS (th) (Max) @ Id | 4V @ 1mA | |
| VGS (Max) | ±20V | |
| Teknologi | MOSFET (Metal Oxide) | |
| Pembekal Peranti Pakej | TO-3PF | |
| Siri | - | |
| Rds On (Max) @ Id, VGS | 102mOhm @ 18.1A, 10V | |
| Kuasa Penyebaran (Max) | 120W (Tc) | |
| Pakej / Kes | TO-3P-3 Full Pack | |
| Pakej | Tube |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Suhu Operasi | 150°C (TJ) | |
| pemasangan Jenis | Through Hole | |
| Input kemuatan (CISS) (Max) @ Vds | 2720 pF @ 25 V | |
| Gate Charge (QG) (Max) @ VGS | 110 nC @ 10 V | |
| Jenis FET | N-Channel | |
| FET Ciri | - | |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | |
| Parit untuk Source Voltan (Vdss) | 600 V | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 35A (Tc) |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| Mencapai status | REACH Unaffected |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan Rohm Semiconductor R6035ENZC8.
| Atribut produk | ||||
|---|---|---|---|---|
| Nombor Bahagian | R6035ENZM12C8 | R6035KNZC8 | R6035ENZ1C9 | R6035ENZC17 |
| Pengeluar | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Drive Voltan (Max Rds On, Min Rds On) | - | - | - | - |
| VGS (th) (Max) @ Id | - | - | - | - |
| Pakej | - | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Pembekal Peranti Pakej | - | 196-NFBGA (12x12) | 16-PDIP | 64-VQFN (9x9) |
| Rds On (Max) @ Id, VGS | - | - | - | - |
| VGS (Max) | - | - | - | - |
| Suhu Operasi | - | -40°C ~ 85°C | 0°C ~ 70°C | -40°C ~ 85°C |
| Pakej / Kes | - | 196-LFBGA | 16-DIP (0.300', 7.62mm) | 64-VFQFN Exposed Pad |
| FET Ciri | - | - | - | - |
| Jenis FET | - | - | - | - |
| Parit untuk Source Voltan (Vdss) | - | - | - | - |
| Siri | - | - | - | - |
| Gate Charge (QG) (Max) @ VGS | - | - | - | - |
| Teknologi | - | - | - | - |
| Semasa - Drain berterusan (Id) @ 25 ° C | - | - | - | - |
| Kuasa Penyebaran (Max) | - | - | - | - |
| Input kemuatan (CISS) (Max) @ Vds | - | - | - | - |
| pemasangan Jenis | - | Surface Mount | Through Hole | Surface Mount |
Muat turun R6035ENZC8 PDF datasheets dan dokumentasi Rohm Semiconductor untuk R6035ENZC8 - Rohm Semiconductor.
R60400-1STREaton - Bussmann Electrical DivisionFUSE BLOK CART 600V 400A CHASSIS
R6031235Powerex, Inc.IGBT Module
R6031435ESYAPowerex Inc.DIODE GP REV 1.4KV 350A DO205AB
R6031235ESYAPowerex Inc.DIODE GP REV 1.2KV 350A DO205AB
R6031425HSYAPowerex Inc.DIODE GP REV 1.4KV 250A DO205AB
R60400-1CREaton - Bussmann Electrical DivisionFUSE BLOK CART 600V 400A CHASSIS
R6032022Powerex, Inc.IGBT Module
R6031225HSYAPowerex Inc.DIODE GP REV 1.2KV 250A DO205ABAlamat e -mel anda tidak akan diterbitkan.
| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
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