- Jess***Jones
- 2026/04/17
Helaian data
2SK2713.pdfSpesifikasi teknologi 2SK2713
Spesifikasi Teknikal Rohm Semiconductor - 2SK2713, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan Rohm Semiconductor - 2SK2713
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | LAPIS Technology | |
| VGS (th) (Max) @ Id | 4V @ 1mA | |
| VGS (Max) | ±30V | |
| Teknologi | MOSFET (Metal Oxide) | |
| Pembekal Peranti Pakej | TO-220FN | |
| Siri | - | |
| Rds On (Max) @ Id, VGS | 1.4Ohm @ 2.5A, 10V | |
| Kuasa Penyebaran (Max) | 30W (Tc) | |
| Pakej / Kes | TO-220-3 Full Pack | |
| Pakej | Bulk |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Suhu Operasi | 150°C (TJ) | |
| pemasangan Jenis | Through Hole | |
| Input kemuatan (CISS) (Max) @ Vds | 600 pF @ 10 V | |
| Jenis FET | N-Channel | |
| FET Ciri | - | |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | |
| Parit untuk Source Voltan (Vdss) | 450 V | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 5A (Ta) | |
| Nombor produk asas | 2SK27 |
| ATRIBUT | PENERANGAN |
|---|---|
| Status RoHS | Mematuhi ROHS3 |
| Tahap Sensitiviti Kelembapan (MSL) | 1 (Unlimited) |
| Mencapai status | REACH Unaffected |
| ECCN | EAR99 |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan Rohm Semiconductor 2SK2713.
| Atribut produk | ![]() |
|||
|---|---|---|---|---|
| Nombor Bahagian | 2SK2713 | 2SK2715TL | 2SK2719(F) | 2SK2701A |
| Pengeluar | Rohm Semiconductor | Rohm Semiconductor | Toshiba Semiconductor and Storage | Sanken Electric USA Inc. |
| Jenis FET | N-Channel | N-Channel | N-Channel | N-Channel |
| VGS (Max) | ±30V | ±30V | ±30V | ±30V |
| Nombor produk asas | 2SK27 | 2SK2715 | 2SK2719 | - |
| Semasa - Drain berterusan (Id) @ 25 ° C | 5A (Ta) | 2A (Ta) | 3A (Ta) | 7A (Ta) |
| VGS (th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1µA |
| pemasangan Jenis | Through Hole | Surface Mount | Through Hole | Through Hole |
| Input kemuatan (CISS) (Max) @ Vds | 600 pF @ 10 V | 280 pF @ 10 V | 750 pF @ 25 V | 720 pF @ 10 V |
| Teknologi | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Suhu Operasi | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Rds On (Max) @ Id, VGS | 1.4Ohm @ 2.5A, 10V | 4Ohm @ 1A, 10V | 4.3Ohm @ 1.5A, 10V | 1.1Ohm @ 3.5A, 10V |
| Pembekal Peranti Pakej | TO-220FN | CPT3 | TO-3P(N) | TO-220F |
| Pakej | Bulk | Tape & Reel (TR) | Tube | Bulk |
| Siri | - | - | - | - |
| Kuasa Penyebaran (Max) | 30W (Tc) | 20W (Tc) | 125W (Tc) | 35W (Tc) |
| FET Ciri | - | - | - | - |
| Parit untuk Source Voltan (Vdss) | 450 V | 500 V | 900 V | 450 V |
| Drive Voltan (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Pakej / Kes | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3P-3, SC-65-3 | TO-220-3 Full Pack |
Muat turun 2SK2713 PDF datasheets dan dokumentasi Rohm Semiconductor untuk 2SK2713 - Rohm Semiconductor.
2SK2690FUJI
2SK2689-01MR MOSFujitsu Electronics America, Inc.
2SK2718TSOAlamat e -mel anda tidak akan diterbitkan.
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